Investigating the Impact of Self-Heating Effects on some Thermal and Electrical Characteristics of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs

The dielectric pocket gate-all-around (DPGAA) MOSFET is being considered the best suited candidate for ULSI electronic chips because of excellent electrostatic control over channel. However, phenomena self-heating and hot carrier injection (HCI) severely affect performance device, make behaviour DPGAA FET very unpredictable. In present article, a comprehensive investigation under influence effects has been done variation in lattice temperature against spacer length, ambient temperature, device thermal contact resistance including ON Off currents with gate bias voltage (VGS). order to analyse SHEs, hydrodynamic (HD) thermodynamic (TD) transport models have used three-dimensional (3D) electrothermal (ET) simulation. Lucky (hot injection) model study HCI degradation using Sentaurus 3D TCAD simulator.